| PART |
Description |
Maker |
| NAND02GW3B2D |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
| NAND01G-B2B NAND01GR3B2CN6E NAND02GR3B2CN6E NAND01 |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| OPB992L55 OPB992P15 OPB992N11 OPB992L15 OPB990N51 |
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-SOIC 150mil, TUBE
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, T/R
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, TUBE
128K SPI SERAL EEPROM W/ 64 BYTE PAGE, 1.8V, -40C to 85C, 8-PDIP, TUBE
8K SPI 1K X 8, 16B PAGE, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
2K, 256 X 8, 1.8V SER EE, -40C to 125C, 6-SOT-23, T/R
2K, 256 X 8, 1.8V SER EE, -40C to 125C, 8-TSSOP, T/R
2K, 256 X 8, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
|
TT electronics OPTEK Technology
Central Semiconductor, Corp.
|
| AT28HC64B |
64K EEPROM with 64-Byte Page & Software Data Protection
|
Atmel
|
| AT28C040 |
4M bit EEPROM with 256-Byte Page & Software Data Protection
|
Atmel
|
| AT28C010 |
1M bit EEPROM with 128-Byte Page & Software Data Protection
|
Atmel
|
| MSM511664C |
65536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
|
